7/11/2023 0 Comments Download hemt4 Following that, S-parameter measurements are used to evaluate circuits for each of these devices. GIT is used for developing equivalent circuits using current models, whereas MIS is used for core drain-current modeling. A single model can be used for both MIS and GIT structures. The original article is available here.įigure 1 shows the setup used to test these two structures. MIS has less reliability for gate interference and a low threshold voltage, whereas GIT has less gate switching speed and a higher gate leakage current. These two modes are the metal-insulator–semiconductor (MIS) structure, 2 which has a low gate leakage current driven by voltage, and the gate-injection transistor (GIT), 3 which has a ridge structure and a high threshold voltage. Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs).
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